| Xyce
Version 3.1 |
Device |
Comments |
| Capacitor |
Age-aware,
semiconductor |
| Inductor |
Nonlinear
mutual inductance (see below) |
| Resitor |
Semiconductor |
| Diode
(Level 1) |
|
| Diode
(Level 2) |
Addition
of PSPICE enhancements |
| Diode
(Level 3) |
Prompt
and delayed photocurrent radiation model |
| Diode
(Level 4) |
Generic
photocurrent source model |
| Independent
Voltage Source (VSRC) |
|
| Independence
Current Source (ISRC) |
|
|
Voltage Controlled Voltage Source (VCVS) |
|
| Voltage
Controlled Current Source (VCCS) |
|
| Current
Controlled Voltage Source (CCVS) |
|
| Voltage
Controled Current Source (CCCS) |
|
| Bipolar
Junction Transistor (BJT) (Level 1) |
|
| Bipolar
Junction Transistor (BJT) (Level 2) |
Prompt
photocurrent radiation model |
| Bipolar
Junction Transistor (BJT) (Level 3) |
Neutron-effects
model |
| Bipolar
Junction Transistor (BJT) (Level 4) |
Promt
photocurrent radiation model (same as level 2) |
| Bipolar
Junction Transistor (BJT) (Level 5) |
Deveney-Wrobel
Neutron mode, with photocurrent |
| Junction
Field Effect Transistor (JFET) (Level 1) |
SPICE-compatible
JFET model |
| Junction
Field Effect Transistor (JFET) (Level 2) |
Shockley
JFET model |
| MESFET
|
|
| MOSFET
(Level 1) |
|
| MOSFET
(Level 3) |
|
| MOSFET
(Level 9) |
BSIM3
model with initial condition support |
| MOSFET
(Level 10) |
BSIM
SOI model with initial contion support |
| MOSFET
(Level 18) |
VDMOS
general model |
| MOSFET
(Level 19) |
VDMOS
total dose radiation model |
| MOSFET
(Level 20) |
VDMOS
photocurrent model |
| Transmission
Line |
Lossless |
| Controlled
Switch (S,W) (VSWITCH/ISWITCH) |
Voltage
or current controlled |
| Generic
Switch (SW) |
Controlled
by an expression |
| PDE
Devices (Level 1) |
One-Dimensional |
| PDE
Devices (Level 2) |
Two-Dimensional |
| Digital
(Level 1) |
Behavior
Digital |
| EXT
(Level 1) |
External
Device, used for code coupling and power-node
parastitics simulations |
| OP
AMP (Level 1) |
Ideal
operational amplifier |
